semiconductor group 1999-03-04 1 bts 244 z vpt05165 1 5 speed tempfet n-channel enhancement mode logic level input analog driving possible fast switching up to 1 mhz potential-free temperature sensor with thyristor characteristics overtemperature protection avalanche rated vpt05166 1 5 type v ds r ds(on) package marking ordering code bts 244 z 55 v 13 m w to-220 ab - q67060-s6000 to-220-5 smd q67060-s6003 pin symbol function 1 g gate 2 a anode temperature sensor 3 d drain 4 k cathode temperature sensor 5 s source
semiconductor group 1999-03-04 2 bts 244 z maximum ratings, at t j = 25c unless otherwise specified parameter symbol value unit drain source voltage v ds 55 v drain-gate voltage, r gs = 20 k w 55 v dgr 14 gate source voltage v gs nominal load current (iso 10483) v gs = 4.5 v, v ds 0.5 v, t c = 85 c v gs = 10 v, v ds 0.5 v, t c = 85 c i d(iso) a 19 26 continuous drain current 1) t c = 100 c, v gs = 4.5v i d 35 188 i d puls pulsed drain current avalanche energy, single pulse i d = 19 a, r gs = 25 w e as j 1.65 power dissipation t c = 25 c p tot 170 w operating temperature 2) t j -40 ...+175 c -55 ... +150 t st g storage temperature din humidity category, din 40 040 e iec climatic category; din iec 68-1 40/150/56 1 current limited by bond wire 2 note: thermal trip temperature of temperature sensor is below 175c
semiconductor group 1999-03-04 3 bts 244 z electrical characteristics parameter symbol unit values at t j = 25c, unless otherwise specified min. max. typ. thermal characteristics r thjc - junction - case: - 0.88 k/w thermal resistance @ min. footprint r th(ja) - - 62 thermal resistance @ 6 cm 2 cooling area 1) r th ( ja ) - 33 - static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma v (br)dss 55 v - - gate threshold voltage, v gs = v ds i d = 130 a i d = 250 a 1.2 - 2 - 1.6 1.65 v gs(th) zero gate voltage drain current v ds = 50 v, v gs = 0 v, t j = -40 c v ds = 50 v, v gs = 0 v, t j = 25 c v ds = 50 v, v gs = 0 v, t j = 150 c i dss - - - a - 0.1 - 0.1 1 100 gate-source leakage current v gs = 20 v, v ds = 0 v, t j = 25 c v gs = 20 v, v ds = 0 v, t j = 150 c i gss na - - 10 20 100 100 drain-source on-state resistance v gs = 4.5 v, i d = 19 a v gs = 10 v, i d = 19 a 16 11.5 m w r ds(on) 18 13 - - 1 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb mounted vertical without blown air.
semiconductor group 1999-03-04 4 bts 244 z electrical characteristics parameter values symbol unit at t j = 25c, unless otherwise specified typ. max. min. dynamic characteristics g fs 25 - s forward transconductance v ds >2* i d * r ds(on)max , i d = 35 a - c iss input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz - 2130 pf 2660 c oss - output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz 600 750 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 320 400 turn-on delay time v dd = 30 v, v gs = 4.5 v, i d = 47 a, r g = 2.2 w t d(on) - 15 25 ns rise time v dd = 30 v, v gs = 4.5 v, i d = 47 a, r g = 2.2 w t r - 70 105 turn-off delay time v dd = 30 v, v gs = 4.5 v, i d = 47 a, r g = 2.2 w t d(off) - 40 60 fall time v dd = 30 v, v gs = 4.5 v, i d = 47 a, r g = 2.2 w t f - 25 40 gate charge characteristics 3.8 gate charge at threshold v dd = 40 v, i d = 0.1 a, v gs = 0 to 1 v q g(th) nc - 2.5 gate charge at 5.0 v v dd = 40 v, i d = 47 a, v gs = 0 to 5 v q g(5) 75 - 50 gate charge total v dd = 40 v, i d = 47 a, v gs = 0 to 10 v q g(total) - 85 130 gate plateau voltage v dd = 40 v, i d = 47 a v (plateau) - 4.5 - v
semiconductor group 1999-03-04 5 bts 244 z electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. reverse diode i s inverse diode continuous forward current t c = 25 c 35 - - a i fm 188 - inverse diode direct current,pulsed t c = 25 c - v sd inverse diode forward voltage v gs = 0 v, i f = 94 a - 1.25 v 1.8 ns 165 110 - t rr reverse recovery time v r = 30 v, i f = i s , d i f /d t = 100 a/s 0.23 0.35 nc - reverse recovery charge v r = 30 v, i f = i s , d i f /d t = 100 a/s q rr sensor characteristics v v ak(on) forward voltage i ak(on) = 5 ma, t j = -40...+150 c - 1.4 1.3 sensor override t p = 100 m s , t j = -40...+150 c - - 10 forward current t j = -40...+150 c i ak(on) - - 5 ma sensor override t p = 100 m s , t j = -40...+150 c - - 600 temperature sensor leakage current t j = 150 c i ak(off) - - 4 a
semiconductor group 1999-03-04 6 bts 244 z electrical characteristics parameter symbol unit values typ. max. min. characteristics holding current, v ak(off) = 5v t j = 25 c t j = 150 c i ak(hold) 0.5 0.3 - - ma 0.05 0.05 170 thermal trip temperature v ts = 5v 160 c t ts(on) 150 t off 0.5 - 2.5 m s turn-off time v ts = 5v, i ts(on) = 2 ma reset voltage t j = -40...+150c v ak(reset) 0.5 - - v on-state resistance r on = f(t j ); i d =19a; v gs = 4.5v -50 -25 0 25 50 75 100 125 c 175 t j 0 5 10 15 20 25 30 m w 40 r ds(on) typ. max. on-state resistance r on = f(t j ); i d =19a; v gs = 10v -50 -25 0 25 50 75 100 125 c 175 t j 0 5 10 15 20 m w 30 r ds(on) typ. max.
semiconductor group 1999-03-04 7 bts 244 z maximum allowable power dissipation p tot = f( t c ) -40 0 40 80 120 c 180 t c 0 20 40 60 80 100 120 140 180 p tot drain current i d = f( t c ); v gs 3 4.5v 0 20 40 60 80 100 120 140 c 180 t c 0 5 10 15 20 25 30 a 40 i d typ. transient thermal impedance z thja = f( t p ) @ 6 cm 2 cooling area parameter: d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -2 10 -1 10 0 10 1 10 2 10 k/w z thja single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 transient thermal impedance z thjc = f(t p ) parameter: d=t p /t 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5
semiconductor group 1999-03-04 8 bts 244 z typ. transfer characteristics i d = f( v gs ); v ds = 12v; t j = 25c 0 1 2 3 v 5 v gs 0 10 20 30 40 50 60 70 80 a 100 i d typ. input threshold voltage v gs(th) = f(t j ); v ds = v gs parameter: i d -50 -25 0 25 50 75 100 125 c 175 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v 2.4 v gs(th) 130a 1.3ma 13ma 130ma typ. output characteristic i d = f(v ds ); t j =25c parameter: v gs 0 1 2 v 4 v ds 0 20 40 60 80 100 120 140 a 180 i d 3v 3.5v 4v 4.5v 5v 6v 7v 10v safe operating area i d =f(v ds ); d =0.01; t c =25c; v gs =4.5v 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a i d tp=50s rdson=vds/id dc 100ms 10ms 1ms 100s
semiconductor group 1999-03-04 9 bts 244 z forward charcteristics of reverse diode i f = f( v sd ); t p = 80s (spread) parameter: t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v 1.6 v sd -1 10 0 10 1 10 2 10 a i f 25c 150c drain-source break down voltage v (br)dss = f( t j ) -40 0 40 80 120 c 180 t j 50 52 54 56 58 60 62 v 66 v (br)dss typ. gate charge v gs = f( q gate ); i d puls = 47a 0 20 40 60 80 100 nc 140 q gate 0 2 4 6 8 10 12 v 16 bts 244 z v gs ds max v 0,8 ds max v 0,2 typ. capacitances c = f( v ds ); v gs =0 v, f =1 mhz 0 4 8 12 16 20 24 28 32 v 40 v ds -1 10 0 10 1 10 nf c ciss coss crss
semiconductor group 1999-03-04 10 bts 244 z 3.7 9.5 9.9 15.6 2.8 12.8 0.5 2.4 9.2 1.3 4.4 0.8 1.7 9.75 4.5 8.2 gpt05165 4 x 1.7 = 6.8 5.6 1) 1) shear and punch direction no burrs this surface 2) min. length by tinning 5 3) 2) 3) max. 11 mm allowable by tinning 1) 6.8 = 1.7 x 4 1.7 0.8 gpt05166 shear and punch direction no burrs this surface 1.5 10.5 8 9.9 0.2 4.4 1.3 2.4 1.5 9.2 3.5 1) 0.5 0.2 m edition 03 / 1999 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the express written approval of the semiconductor group of siemens ag. 1)a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
